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Nanoscale Field-Effect Transistor Based on Layer-by-Layer Self-Assembled Nanoparticle Thin Films

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In this paper, the fabrication and characterization of nanoscale field-effect transistors based on layer-by-layer nano self-assembly technique is introduced. The indium oxide nanoparticle thin film works as the channel material, while the silicon dioxide nanoparticle thin film serves as the gate dielectric material. Electron-beam lithography is used to pattern the source/drain electrode, and results in the channel length at 25 nm. The field-effect transistors operate at a linear region, with a mobility of 0.928 cm2/Vs, and an on/off ratio of 1.32 × 105. The nanoscale field-effect transistor described in this paper is a demonstration of an inexpensive approach to fabricate nanoscale transistors and integrated circuits based on the low-cost and promising layer-by-layer nano self-assembly.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2006.206

Publication date: August 1, 2006

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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