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Germanium Self-Assembled Quantum Dots in Silicon for Nano- and Optoelectronics

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Abstract:

The scope of this article is to review the formation mechanisms, variety of electronic and optical phenomena, as well as possible device-oriented applications, in Ge/Si self-assembled quantum dots that have been synthesized by molecular-beam heteroepitaxy. A difference of this review from the other existing works on physics of Ge/Si nanostructures is that we will focus on the fundamental aspects and device applications of the dots whose size is extremely small (∼10 nm) and the electronic states resemble certainly those of an atom even at room temperature.

Keywords: ELECTRONIC STRUCTURE; GERMANIUM; QUANTUM DOTS; SELF-ASSEMBLING; SILICON; STRAIN

Document Type: Review Article

DOI: http://dx.doi.org/10.1166/jno.2006.201

Publication date: August 1, 2006

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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