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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.

Publisher: American Scientific Publishers

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Volume 1, Number 2, August 2006

Reviews

Germanium Self-Assembled Quantum Dots in Silicon for Nano- and Optoelectronics
pp. 119-175(57)
Authors: Yakimov, A. I.; Dvurechenskii, A. V.; Nikiforov, A. I.

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Flexible Sensors—A Review
pp. 194-202(9)
Authors: Çelik-Butler, Zeynep; Butler, Donald P.

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Research Articles

Metallized DNA Nanotemplates for the Fabrication of ZnO Nanostructures for Optoelectronic Applications
pp. 203-210(8)
Authors: Wang, Xu; Liu, Fei; Wang, Kang L.; Ozkan, Cengiz S.

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Controlled Electron-Beam-Induced Large-Scale Alignment of Carbon Nanotubes at Metal Electrodes
pp. 211-214(4)
Authors: Chaudhary, Sumit; Kim, Joong Hyun; Ozkan, Mihrimah

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Polymer Light-Emitting Diodes Based on Poly[9,9-di-(2′-ethylhexyl)fluorenyl-2,7-diyl]
pp. 219-223(5)
Authors: Zhang, Qiushu; Chambers, David Keith; Selmic, Sandra

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Near-Field Heat Transfer in Composite Media Based on Uniformely Dispersed Nanoparticles
pp. 224-227(4)
Authors: Volz, Sebastian; Domingues, Gilberto

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Modeling and Simulation of the Nanoscale Triple-Gate Ultra-Thin Body MOS Devices
pp. 237-250(14)
Authors: Datta, Deepanjan; Sarab, A. A. P.; Dasgupta, S.

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Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors
pp. 258-263(6)
Authors: Liu, W. L.; Chen, Y. L.; Balandin, A. A.; Wang, K. L.

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