Abstract:

Controllable synthesis of the nanostructures of group III nitrides is an important topic for potential applications in semiconductor nanotechnology due to their promising optical and electrical properties. In this article, different quasi-aligned one-dimensional AlN nanostructures, including columnar flowers, nanocolumns, and nanocones, have been selectively synthesized via catalyst-assisted vapor-solid epitaxial growth on Co-deposited quartz plate through the reaction between AlCl₃ vapor and NH₃. The as-prepared hexagonal AlN products grow preferentially along the c-axis, the extent of which depends on the synthetic conditions. The growth mechanism is discussed based on the correlation among the reaction temperature, AlCl₃ vapor pressure, and the morphologies of the products.

Document Type: Research article

DOI: 10.1166/jno.2006.014