Authors: Fu, Y.; Engström, O.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 1, Number 1, April 2006 , pp. 108-113(6)

Publisher: American Scientific Publishers

Abstract:

By solving the three-dimensional Schrödinger equation in the time domain, we study the wave packet transport through a Si quantum nano wire embedded in silicon dioxide. The temporal behaviour of the wave packet under the influence of an ionized impurity located in the system has been clearly revealed. In general, the presence of an impurity potential deteriorates the coherence transmission of the wave packet along the quantum wire. However, the large effective mass of the electrons in Si material largely overcomes the scattering potential induced by a positively charged impurity, which traps only a small fraction of a wave packet when the wave vector of the transporting wave packet resonantly matches with the characteristic length of the scattering potential. The repulsive potential of a negatively charged impurity strongly reflects the low-energy wave packet transmission. We conclude that the dominating impurity scattering process limiting ballistic transport in these nano wires will be determined by negatively charged impurities located at the Si-SiO₂ interface.

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jno.2006.013

Publication date: 2006-04-01

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• Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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