Mechanism for Blinking of Colloidal Semiconductor Quantum Dots in Electrolytic Suspensions

Authors: Dutta, Mitra; Stroscio, Michael A.; West, Bruce J.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 1, Number 1, April 2006 , pp. 99-103(5)

Publisher: American Scientific Publishers

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Abstract:

Thermally induced fluctuations in the double-layer potential are shown to be a mechanism contributing to the observed blinking of colloidal semiconductor quantum dots in electrolytic suspensions. By relating the fluctuations to the surface charge density on the quantum dot to fluctuations in the double-layer potential, it is shown that the fluctuation barrier potential has exactly the functional form needed to result in an inverse-power-law distribution for off times. Moreover, analytical results show that the distribution of off times τ_off scales as 1/τ^3/2_off just as previously observed experimentally.

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jno.2006.011

Publication date: 2006-04-01

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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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