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Two-Dimensional Fluid Simulation of Large-Scale, Capacitively-Coupled Plasma Discharge for Display Device Processes

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A plasma simulation based on a fluid model is conducted for capacitively-coupled plasma (CCP), which is used for thin-film transistor fabrication in display devices. A two-dimensional cross section of a process chamber is used in the simulation. Simulation results were compared with those of a 1D simulation method. The plasma characteristics were investigated using several process conditions such as applied voltage and pressure.
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Keywords: CCP Discharge; Plasma Simulation

Document Type: Research Article

Affiliations: 1: School of Electronics and Information Engineering, Korea Aerospace University, Goyang, 10540, Republic of Korea 2: Plasma Technology Research Center, National Fusion Research Institute, Gunsan, 54004, Republic of Korea 3: School of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, 16419, Republic of Korea 4: Department of Materials Engineering, Korea Aerospace University, Goyang, 10540, Republic of Korea 5: Keisoku Engineering System Co., Ltd., Chiyoda, Tokyo, 101-0047, Japan

Publication date: 01 November 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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