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Characteristics of Tungsten Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Device

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Tungsten doped carbon (WC) films were fabricated by unbalanced magnetron sputtering (UBMS) using two targets of carbon and tungsten. The effect of target power density on the structural, surface, and electrical properties of the WC films was investigated. WC films, which fabricated at various target power densities, exhibited uniform and smooth surface. The resistivity values of WC films are decreased with the increase of target power density, and the minimum value was about 6 × 10−4 Ω-cm at target power density of 35 W/cm2. The increase of target power density contributed to the increase of the sp 2 bonding contents in carbon films. In the result, we fabricated the OTFT using WC gate electrodes and obtained the good electrical performance of the OTFT devices.
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Keywords: Organic Thin Film Transistor; Resistivity; Target Power Density; Unbalanced Magnetron Sputtering; W Doped Carbon

Document Type: Research Article

Affiliations: 1: Department of Electronics, Chosun College of Science and Technology, Gwangju 61453, Korea 2: Korea Photonics Technology Institute (KOPTI), Gwangju 61007, South Korea 3: School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea

Publication date: 2017-11-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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