In recent years, aluminum nitride (AlN) and gallium nitride (GaN) heterostructures have been attracted considerable interest, especially for light emitting diode applications. In this work, 200-nm-thick AlN buffer layers were grown on patterned sapphire substrates (PSSs) via reactive
radio frequency (RF) sputtering by using a mixture of argon and nitrogen gas at different powers. As the crystal quality of the AlN buffer layer improves, the surface of the GaN film grown in top of the AlN layer can achieve higher uniformity. GaN film with a thickness of 4.5 μm
were grown by metal organic chemical vapor deposition, and then characterized by using field emission scanning electron microscopy and atomic force microscopy. The differences in the growth behavior of the GaN films affected the crystallinity of the GaN epitaxial film. The crystal quality
of the films was evaluated by high-resolution X-ray diffraction and panchromatic cathodoluminescence, while the dislocation densities were calculated by using the full width half maximum. In this study, we investigated how the crystallinity of the AlN layer, deposited on PSS, can affect the
GaN film growth and be exploited to produce high-quality GaN epitaxial layers.
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Document Type: Research Article
Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Quality Planning Team, Quality Management Division, LG Innotek, Seoul 04637, Korea
Publication date: 01 November 2016
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Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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