Ohmic Contacts to N-Face p-GaN Using Ni/Au for the Fabrication of Polarization Inverted Light-Emitting Diodes
The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 Ω cm2 to 9.05 × 10−3 Ω cm2 for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature. However, the specific contact resistance could be decreased down to 1.03 × 10−4 Ω cm2 by means of surface treatment using an alcohol-based (NH4)2S solution. The depth profile data measured from the intensity of O1s peak in the X-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing the surface oxide layer of GaN.
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Document Type: Research Article
Publication date: 2013-08-01
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