Effect of Temperature on the Characteristics of Silicon Nanowire Transistor

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This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, I ON/I OFF ratio, draininduced barrier lowering (DIBL), and sub-threshold swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characteristics of a transistor. The findings reveal the negative effect of higher working temperature on the use of SiNWTs in electronic circuits, such as digital circuits and amplifiers circuits, because of the lower I ON/I OFF ratio, higher DIBL, and higher SS at higher temperature. Moreover, the ON state is the optimum condition for using a transistor as a temperature nano-sensor.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.6598

Publication date: October 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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