This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, ION/IOFF ratio, draininduced barrier lowering (DIBL), and sub-threshold
swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characteristics of a transistor. The findings reveal the negative effect of higher working temperature on the use of SiNWTs in electronic circuits, such as digital circuits and amplifiers circuits, because of
the lower ION/IOFF ratio, higher DIBL, and higher SS at higher temperature. Moreover, the ON state is the optimum condition for using a transistor as a temperature nano-sensor.
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