Effect of Temperature on the Characteristics of Silicon Nanowire Transistor
Authors: Hashim, Yasir; Sidek, Othman
Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 10, October 2012 , pp. 7849-7852(4)
Publisher: American Scientific Publishers
Abstract:This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, I ON/I OFF ratio, draininduced barrier lowering (DIBL), and sub-threshold swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characteristics of a transistor. The findings reveal the negative effect of higher working temperature on the use of SiNWTs in electronic circuits, such as digital circuits and amplifiers circuits, because of the lower I ON/I OFF ratio, higher DIBL, and higher SS at higher temperature. Moreover, the ON state is the optimum condition for using a transistor as a temperature nano-sensor.
Document Type: Research Article
Publication date: October 1, 2012
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