Above Room Temperature Ferromagnetism in Si:Mn and TiO2−δ :Co
We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO2−δ magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as the starting materials for implantation with Mn ions at the fluencies up to 5 × 1016 cm−2. The saturation magnetization was found to show the lack of any regular dependence on the Si conductivity type, type of impurity and the short post-implantation annealing. According to XMCD Mn impurity in Si does not bear any appreciable magnetic moment at room temperature. The obtained results indicate that above room temperature ferromagnetism in Mn-implanted Si originates not from Mn impurity but rather from structural defects in Si. The TiO2−δ :Co thin films were deposited on LaAIO3 (001) substrates by magnetron sputtering in the argon–oxygen atmosphere at oxygen partial pressure of 2·10−6–2·10−4 Torr. The obtained transverse Kerr effect spectra at the visible and XMCD spectra indicate on intrinsic room temperature ferromagnetism in TiO2−δ :Co thin films at low (< 1%) volume fraction of Co.
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Document Type: Research Article
Publication date: 2012-09-01
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