The Oxides Growth During High-Temperature Oxidation of Si1−x Ge x Nanowires
Abstract:Concerning the oxidation behavior of Si1−x Ge x (x = 0.15, 0.3) nanowires at high temperature, Si1−x Ge x nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si1−x Ge x thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si1−x Ge x and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si1−x Ge x nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
Document Type: Research Article
Publication date: July 1, 2012
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