The Oxides Growth During High-Temperature Oxidation of Si1−x Ge x Nanowires
Concerning the oxidation behavior of Si1−x Ge x (x = 0.15, 0.3) nanowires at high temperature, Si1−x Ge x nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si1−x Ge x thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si1−x Ge x and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si1−x Ge x nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
Document Type: Research Article
Publication date: 2012-07-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites