Influences of Ti Film Thickness on Electrochemical Properties of Si/Ti/Cu Film Electrodes
Si and Si/Ti films were fabricated on a Cu current collector (substrate) using the DC sputtering system. The Ti film as a buffer layer was inserted between the Si film and the Cu current collector. Their structural and electrochemical properties were investigated with various Ti film thicknesses of 20–90 nm. The Si and Ti films deposited on a polycrystalline Cu substrate were amorphous. The Si/Ti/Cu film electrode exhibited better electrochemical properties than the Si/Cu electrode in terms of capacity, charge–discharge efficiency, and cycleability. In the Si/Ti/Cu electrode, the film electrode with a 55 nm Ti film thickness showed the best electrochemical properties: 367μA h/cm2 initial capacity, 91% efficiency, and 50% capacity retention after 100 cycles. These good electrochemical properties are attributed to the enhanced adhesion between the Si and Ti films. Additionally, the modified surface morphology of Si film with a cluster structure could withstand the lateral volume change during the charge–discharge process.
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Document Type: Research Article
Publication date: 2012-07-01
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