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Effect of Temperature on Optical and Electronic Properties of InGaP/InGaAlP Multiple Quantum Wells

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The optical and electronic properties in an InGaP/InGaAlP multiple quantum well (MQW) grown by using molecular-beam epitaxy utilizing the digital alloy technique were investigated through temperature-dependent photoluminescence (PL) measurements and numerical calculations. The high-resolution transmission electron microscopy images showed that the sample clearly displayed the InGaP wells and the InGaAIP barriers and separate confinement heterostructure layers. The PL measurements at various temperatures were performed to investigate the interband transitions of the InGaP/InGaAlP MQW. The electronic subband energies and the wavefunctions in the InGaP/InGaAlP MQW at several temperatures were determined by using a finite element method employing the standard 8-band k.p Lagrangian. The numerical results for optical interband transition energies from the ground state electron subband to the ground state heavy-hole subband of the InGaP/InGaAlP MQW at various temperatures were in reasonable agreement with the excitonic transition energies observed in the PL measurements.

Document Type: Research Article


Publication date: July 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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