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Electrical Properties of 10-nm-Radius n-Type Gate All Around Twin Si Nanowire Field Effect Transistors

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The electrical properties of 10-nm-radius n-type gate all around (GAA) twin Si nanowire field effect transistors (TSNWFETs) and field effect transistors (FETs) without nanowires were investigated to understand their device characteristics. The electrical characteristics of the GAA TSNWFETs and FETs with bulk boron concentrations of 1×1018 and 1×1016 cm-3 were simulated by using threedimensional technology computer-aided design simulation tools of sentaurus taking into account quantum effects. The simulation results showed that the on-current level of the TSNWFETs was larger than that of FETs, and the subthreshold swing and the drain induced barrier lowing of the TSNWFETs were smaller than those of FETs. The current density and conduction band edge profiles in the TSNWFETs clarified the dominant current paths. The simulation results showed that the on-current/off-current ratio increased with increasing bulk boron concentration, and the stand-by current level decreased.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.6392

Publication date: July 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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