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In/Ga Inter-Diffusion in InAs Quantum Dot in InGaAs/GaAs Asymmetric Quantum Well

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Abstract:

The Photoluminescence spectra (PL), their temperature and power dependence were investigated for the ground state in InAs quantum dots (QDs) embedded in InGaAs asymmetric quantum well (Asym. QW). In-atom segregation is well known phenomena in such structures, which result in altering the inter-atomic distances; as a consequence the thermo-dynamical parameters change as well, namely Debye temperature. The bigger value of Debye temperature for the studied sample with respect to the corresponding bulk value is attributed to In/Ga inter-diffusion during growth. The inter-diffusion process causes non-radiative defects in the sample. As a consequence, rapid decrease in the QDs integrated emission intensity as the temperature increases was occurred.

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2012.6280

Publication date: 2012-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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