In this study, Cu/ZnO0.4S0.6/Al devices are fabricated on plastic substrates using the sputtering method at room temperature. The ratio of O/S in the zinc oxysulfide thin film is confirmed to be 0.4/0.6 from the Auger depth profiling. The Cu/ZnO0.4S0.6/Al
devices show unipolar resistive switching behaviors and the ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) is above 104. The conduction mechanism of the LRS is governed by Ohm's law. On the other hand, in the HRS, the
conduction mechanism at low voltages is controlled by Ohm's law, but that at high voltages results from the Poole-Frenkel emission mechanism. The Ohmic and Poole-Frenkel conduction mechanisms observed in the LRS and HRS support the filament model of unipolar resistive switching. The memory
characteristics of the Cu/ZnO0.4S0.6/Al devices are retained for 104 sec without any change.
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