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Resistive Switching Characteristics of Cu/ZnO0.4S0.6/Al Devices Constructed on Plastic Substrates

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In this study, Cu/ZnO0.4S0.6/Al devices are fabricated on plastic substrates using the sputtering method at room temperature. The ratio of O/S in the zinc oxysulfide thin film is confirmed to be 0.4/0.6 from the Auger depth profiling. The Cu/ZnO0.4S0.6/Al devices show unipolar resistive switching behaviors and the ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) is above 104. The conduction mechanism of the LRS is governed by Ohm's law. On the other hand, in the HRS, the conduction mechanism at low voltages is controlled by Ohm's law, but that at high voltages results from the Poole-Frenkel emission mechanism. The Ohmic and Poole-Frenkel conduction mechanisms observed in the LRS and HRS support the filament model of unipolar resistive switching. The memory characteristics of the Cu/ZnO0.4S0.6/Al devices are retained for 104 sec without any change.
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Document Type: Research Article

Publication date: 2012-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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