Electronic Structures and Carrier Distributions of T-Shaped Al x Ga1-x As/Al y Ga1-y As Quantum Wires Fabricated by a Cleaved-Edge Overgrowth Method
Authors: Kim, D.H.; You, J.H.; Kim, J.H.; Yoo, K.H.; Kim, T.W.
Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 7, July 2012 , pp. 5687-5690(4)
Publisher: American Scientific Publishers
Abstract:The electronic structures and carrier distributions of T-shaped Al x Ga1-x As/Al y Ga1-y As quantum wire (QWR) consisting of crossed arm and stem wells were numerically calculated by using a finite-difference method (FDM). The electronic subband energies in the arm and the stem wells were numerically calculated by using the FDM taking into account two-band Hamiltonian systems considering with and without strain and nonparabolicity effects. The band deformation due to strain and the probabilistic electron confinement of T-shaped Al x Ga1-x As/Al y Ga1-y As QWRs were also calculated. The transition energy from the ground heavy-hole state (HH1) to the ground electron state (E1) was 1.584 eV when the strain was not considered and 1.585 eV when the strain effects were included. The excitonic peak energies corresponding to the interband transitions (E1-HH1) in the T-shaped QWRs determined from the photoluminescence spectra were compared favorably with those determined from the FDM calculations.
Document Type: Research Article
Publication date: July 1, 2012
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