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Electronic Structures and Carrier Distributions of T-Shaped Al x Ga1-x As/Al y Ga1-y As Quantum Wires Fabricated by a Cleaved-Edge Overgrowth Method

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Abstract:

The electronic structures and carrier distributions of T-shaped Al x Ga1-x As/Al y Ga1-y As quantum wire (QWR) consisting of crossed arm and stem wells were numerically calculated by using a finite-difference method (FDM). The electronic subband energies in the arm and the stem wells were numerically calculated by using the FDM taking into account two-band Hamiltonian systems considering with and without strain and nonparabolicity effects. The band deformation due to strain and the probabilistic electron confinement of T-shaped Al x Ga1-x As/Al y Ga1-y As QWRs were also calculated. The transition energy from the ground heavy-hole state (HH1) to the ground electron state (E1) was 1.584 eV when the strain was not considered and 1.585 eV when the strain effects were included. The excitonic peak energies corresponding to the interband transitions (E1-HH1) in the T-shaped QWRs determined from the photoluminescence spectra were compared favorably with those determined from the FDM calculations.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.6391

Publication date: July 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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