The influence of the thermal annealing on the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) under different ambient gases has been systematically addressed. The chemical bonding states and transfer characteristics of a-IGZO TFTs show evident
dependence on the annealing ambient gas. For the a-IGZO TFTs in the oxygen ambient annealing at 250 °C for 30 mins exhibited a maximum field effect mobility (max μFE) of 9.36 cm2/V·s, on/off current ratio of 6.12×1010, and a subthreshold
slope (SS) of 0.21 V/decade. Respectively, the as-deposited ones without annealing possess a max μFE of 6.61 cm2/V·s, on/off current ratio of 4.58×108, and a SS of 0.46 V/decade. In contrast, the a-IGZO TFTs annealed at 250 °C
for 30 mins in the nitrogen ambient would be degraded to have a max μFE of 0.18 cm2/V·s, on/off current ratio of 2.22×104, and a SS of 7.37 V/decade, corresponding. It is attributed to the content of the oxygen vacancies, according the
x-ray photoelectron spectroscopy (XPS) analyze of the three different samples.
Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.