Donor and Acceptor Dynamics of Phosphorous Doped ZnO Nanorods with Stable p-Type Conduction: Photoluminescence and Junction Characteristics
Authors: Ahn, Cheol Hyoun; Mohanta, Sanjay Kumar; Cho, Hyung Koun
Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 7, July 2012 , pp. 5571-5576(6)
Publisher: American Scientific Publishers
Abstract:We employed temperature-dependent photoluminescence (PL) to explain the donor and acceptor dynamics in phosphorus doped stable p-type P:ZnO nanorods. The room temperature PL revealed good crystalline and optical quality of P:ZnO nanorods. The 10 K PL spectrum exhibited a dominant acceptor bound exciton (A 0 X) or donor bound exciton (D 0 X) emission corresponding to p- and n-type P:ZnO nanorods, respectively. The donor–acceptor-pair (DAP) transitions exhibited different thermal dissociation energies for the p- and n-type P:ZnO nanorods, suggesting their different quenching channels. The quenching of the DAP transitions of the p-type ZnO:P nanorods was associated with the thermal dissociation of the DAP into free excitons, while the DAP transition of the n-type ZnO:P nanorods was quenched through the thermal dissociation of the shallow donor into free electrons. The rectifying behavior of a p–n homojunction diode formed by the p-type P:ZnO nanorods on n-type ZnO film confirmed the p-type conduction of the P:ZnO nanorods.
Document Type: Research Article
Publication date: July 1, 2012
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