Characterization of the Sno2 Based Thin Film Transistors with Ga, In and Hf Doping

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We investigated the effects of doping tin oxide thin film transistors (TFTs) with Ga, In, and Hf. The quantity of doping impurities added to the Sno2-TFT channel layer was as follows: Ga (6.3–21.4 at.%), In (9.6–55.6 at.%), and Hf (1.2–2.7 at.%). Hafnium and gallium doping of Sno2 thin film decreased the carrier concentration, possibly due to a decrease in field effect mobility, and reduced oxygen vacancy-related defects. Indium-doped Sno2-TFTs exhibited high performance with a high field-effect mobility of >20 cm2 V−1 s−1. The current on/off ratio and the subthreshold swing of In-doped Sno2-TFTs was 1 × 109 and 0.5 V/decade, respectively. These results demonstrate that Ga, In, and Hf doping can effectively enhance the performance of Sno2-based TFT devices.

Document Type: Research Article


Publication date: July 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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