Resistive-Switching Memory Effect of Hybrid Structures with Polyimide and Sno2 Nanocrystals
Abstract:Hybrid memory devices with polyimide and Sno2 nanocrystals on a flexible polyethersulphone substrate have shown a memristor behavior from current–voltage (I–V) measurements. The resistiveswitching effects with a current bistability appeared during cycling voltage sweeping within the range of ±4 V. This I–V switching effect might have originated from a resistance fluctuation due to the charge trapping into the Sno2 nanocrystals as well as the oxygen vacancies of the ZnO layer and aluminum oxides that were formed between the polyimide and the interface of the Al gate electrode. In the bipolar resistance-switching behavior, the ratio of the high- and low-resistance state currents was about 3.7×104 at 1 V.
Document Type: Research Article
Publication date: July 1, 2012
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- ingentaconnect is not responsible for the content or availability of external websites