Thin Film Transistor Based on TiOx Prepared by DC Magnetron Sputtering

This paper reports on the thin film transistor (TFT) based on Tio_x prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic Tio_x target was prepared for the sputtering of the Tio₂ films. The structural, optical, and electrical properties of the Tio₂ films were investigated after their heat treatment. It is observed from XRD measurement that the Tio₂ films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure Tio₂ films show a band-gap energy of ∼3.20 eV and a transmittance of ∼91% (@550 nm). The bottom-gate TFTs fabricated with the Tio₂ film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 10⁴, 0.002 cm²/Vs, and 6 V, respectively. These results indicate the possibility of applying Tio₂ films depositied by DC magnetron sputtering to Tio₂-based opto-electronic devices.