Thin Film Transistor Based on TiOx Prepared by DC Magnetron Sputtering
Abstract:This paper reports on the thin film transistor (TFT) based on Tiox prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic Tiox target was prepared for the sputtering of the Tio2 films. The structural, optical, and electrical properties of the Tio2 films were investigated after their heat treatment. It is observed from XRD measurement that the Tio2 films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure Tio2 films show a band-gap energy of ∼3.20 eV and a transmittance of ∼91% (@550 nm). The bottom-gate TFTs fabricated with the Tio2 film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 104, 0.002 cm2/Vs, and 6 V, respectively. These results indicate the possibility of applying Tio2 films depositied by DC magnetron sputtering to Tio2-based opto-electronic devices.
Document Type: Research Article
Publication date: July 1, 2012
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