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Thin Film Transistor Based on TiOx Prepared by DC Magnetron Sputtering

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This paper reports on the thin film transistor (TFT) based on Tiox prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic Tiox target was prepared for the sputtering of the Tio2 films. The structural, optical, and electrical properties of the Tio2 films were investigated after their heat treatment. It is observed from XRD measurement that the Tio2 films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure Tio2 films show a band-gap energy of ∼3.20 eV and a transmittance of ∼91% (@550 nm). The bottom-gate TFTs fabricated with the Tio2 film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 104, 0.002 cm2/Vs, and 6 V, respectively. These results indicate the possibility of applying Tio2 films depositied by DC magnetron sputtering to Tio2-based opto-electronic devices.

Document Type: Research Article


Publication date: July 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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