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Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors

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Abstract:

Strained-silicon (Si) has been incorporated into a leading nanoscale logic technology. By means of silicon-germanium (SiGe) alloy stressor embedded in source and drain (S/D) region, the performance of P -type metal-oxide-semiconductor field-effect transistors (PMOSFETs) is effectively enhanced. However, when a compressive contact-etch-stop layer (CESL) is combined, the stress interaction and relative impacts of SiGe stressor integrated with CESL on mobility enhancement has been little reported. Therefore, the research performs a three dimensional (3D) stress simulation evaluation based on finite element method (FEM) for PMOSFETs with S/D SiGe stressor and compressive CESL. The proposed simulation methodology is validated as compared with other technological literatures. In additions, the gate width dependency is systematically discussed to explore the stress effects on devices. The analysis results indicate that a −2.6 GPa CESL would continue boosting the stress magnitude on Si channel region except for a gate width smaller than 50 nm. The results are useful for nanoscale transistor while selecting a proper CESL in the manufacturing processes of advanced logic technologies.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.6278

Publication date: July 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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