Electrochemical Fabrication of (TMTSF)2 X (X = PF6, BF4, ClO4) Nanowires
TMTSF-based (TMTSF = tetramethyltetraselenafulvalene = C10H12Se4) charge-transfer salt nanowires were fabricated using the galvanostatic deposition technique that was assisted by an anodic aluminum oxide (AAO) template. By applying a low current density of 1–2 μA/cm2 for more than one month, nanowire arrays with diameters of ∼150 nm and lengths of ∼6 μm were obtained. The length of nanowires can be controlled by the duration of the constant current application. Energydispersive X-ray spectroscopic (EDX) analysis confirmed that selenium is one of the main components of the nanowires. The micro-Raman (v 3C=C) and FT-IR spectra (v 3PF6 –, v 3BF4 –, v 3ClO4 –) indicated that the nanowire arrays had the (TMTSF)2 X (X = PF6, BF4, ClO4) phase. The TEM images and the selected area electron diffraction (SAED) patterns indicate that the nanowires were not single crystals, but the current–voltage characteristic that was measured with the four-terminal method showed the conductivity of the (TMTSF)2PF6 single crystals (σRT = 1.6 S/cm) at room temperature.
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Document Type: Research Article
Publication date: 2012-07-01
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