Novel Palladium Germanide Schottky Contact for High Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism
The leakage current mechanism of Palladium (Pd) germanide Schottky contact on n-type Ge-on- Si substrate is analyzed in depth. The electric field dependent analysis shows that the dominant leakage current mechanism is the Poole-Frenkel emission due to the existence of deep level traps in the depletion region of the Pd germanide/n-type Ge Schottky diode. The analysis of the dependence of leakage current on temperature also shows that the Poole-Frenkel emission and generation current are the dominant components below 100 °C and that the Schottky emission related to thermionic emission of majority carriers over a potential barrier is the main cause of this dominance at high temperature region.
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Document Type: Research Article
Publication date: 01 July 2012
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