@article {Shin:2012:1533-4880:5325,
title = "The Effect of Thermal Annealing on Pentacene Thin Film Transistor with Micro Contact Printing",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2012",
volume = "12",
number = "7",
publication date ="2012-07-01T00:00:00",
pages = "5325-5329",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000007/art00034",
doi = "doi:10.1166/jnn.2012.6253",
author = "Shin, Hong-Sik and Yun, Ho-Jin and Baek, Kyu-Ha and Ham, Yong-Hyun and Park, Kun-Sik and Kim, Dong-Pyo and Lee, Ga-Won and Lee, Hi-Deok and Lee, Kijun and Do, Lee-Mi",
abstract = "We used micro contact printing (-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-m channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS)
elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope
(SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2),
which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.",
}