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Breakdown Characteristics of High-Side Lateral Double-Diffused Metal Oxide Semiconductor Devices

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In this paper, we discuss the breakdown characteristics of an LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure for the optimization of engineering parameters such as the gap between the DEEP N-WELL and the source region and the doping concentration of the N ADJUST-layer. The fabricated device exhibits the breakdown voltage (BVdss) over 110 V and the specific on-resistance as low as 2.20 mΩ cm2. The robust breakdown characteristics seem to be due to the migration of the location wherein maximum impact ionization occurs from the gate region to the drain side, which was confirmed by the numerical simulation which verifies that the maximum impact ionization rate of the proposed structure is 2.44×1016 cm−3 s−1, while that of the conventional structure being 6.69×1019 cm−3 s−1.
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Document Type: Research Article

Publication date: 2012-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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