The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic
magnetoresistance in temperature range of 10–35 K. In GaAs structures with only single Mn deltalayer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.
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