In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn) as Ferromagnetic Semiconductors
Authors: Kamara, S.; Terki, F.; Dumas, R.; Dehbaoui, M.; Sadowski, J.; Galera, R.-M.; Tran, Q.-H.; Charar, S.
Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 6, June 2012 , pp. 4868-4873(6)
Publisher: American Scientific Publishers
Abstract:We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T
Document Type: Research Article
Publication date: June 1, 2012
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