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Characterization of the Oxygen Ionosorption Effect on a Single SnO2 Nanowire by Using Conductive Atomic Force Microscopy

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We have verified that SnO2 nano-wire has an n-type semiconductor property and it can be a p-type one when it is exposed to O2. We employed conductive AFM system to measure the I–V curve and resistance of single SnO2 nano-wire which had been synthesized on the Au thin film by a thermal process. To analyze a effect of O2 ionosorption into nano-wire, resistance was measured with various O2 concentration and we observed increment and maintenance of resistance which caused by O2 ionosorption. Also, the O2 ionosorption causes a type transfer of semiconductor and this phenomenon was verified by comparing the Schottky property of nano-wire before and after O2 exposure.

Document Type: Research Article


Publication date: June 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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