Authors: Wang, C. D.; Jha, S. K.; Chen, Z. H.; Ng, T. W.; Liu, Y. K.; Yuen, M. F.; Lu, Z. Z.; Kwok, S. Y.; Zapien, J. A.; Bello, I.; Lee, C. S.; Zhang, W. J.

Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 6, June 2012 , pp. 4560-4563(4)

Publisher: American Scientific Publishers

Abstract:

Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at±4 V and a small reverse leakage current ∼ 1 μA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory.

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2012.6211

Publication date: 2012-06-01

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• Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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