Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
Authors: Li, Yiming; Cheng, Hui-Wen; Hwang, Chi-Hong
Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 6, June 2012 , pp. 4485-4488(4)
Publisher: American Scientific Publishers
Abstract:The random work-function (WK) induced threshold voltage fluctuation (σV th) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σV th are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.
Document Type: Research Article
Publication date: June 1, 2012
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