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Effects of NH3 Plasma Pre-Treatment of Ta Substrate on Atomic Layer Deposition of Cu Thin Film

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Cu has replaced AI as an interconnection material in ultra-large integrated circuits, reducing resistance capacitance delay and yielding higher electro-migration reliability. However, as the feature size decreases, it becomes more difficult to produce reliable Cu wiring. In this work, the Plasma Enhanced Atomic Layer Deposition (PEALD) of Cu seed layers deposited on Ta substrates (both with and without NH3 plasma pretreatment) was investigated. The Cu seed layers deposited on NH3 plasma-pretreated Ta substrates were found to have favorable properties compared to films deposited without plasma pretreatment because of an increase in the surface energy and of the Ta substrate, which resulted in improved surface wetting.

Document Type: Research Article


Publication date: April 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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