Effects of a PbTiO3 Insertion Layer on the Morphological and Electromechanical Characteristics of Sol–Gel-Driven 0.2PZN–0.8PZT Piezoelectric Films for Energy Harvesters
This study investigated the morphological and electromechanical characteristics of 0.2PZN–0.8PZT films fabricated using a PbTiO3 layer. Crack-free 1-μm-thick films with a pure perovskite phase were obtained on Pt/Ti/SiO2/Si substrates using a modified sol–gel deposition method. A highly dense and smooth morphology and a high piezoelectric coefficient (d 33) of 230 pC/N were observed in a 0.2PZN–0.8PZT film with a PbTiO3 insertion layer after annealing at 750 °C. The as-produced sol–gel-driven 0.2PZN–0.8PZT thin films are attractive for application to piezoelectrically operated microelectronic actuators, sensors, or energy harvesters due to their low facility cost, smooth surface, and excellent electromechanical characteristics.
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Document Type: Research Article
Publication date: 2012-04-01
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