Investigation of Crystallization Behavior of CIG-Se Bi-Layer Thin Films
Copper indium gallium diselenide (CIGSe) thin film was fabricated via a thermal treatment of CIG-Se bi-layer thin films. A CIG layer was prepared first, by a chemical solution deposition (CSD) process. The Se layer was deposited separately on the CIG layer by evaporation. The CIG-Se bi-layer then underwent a thermal treatment to cause a reaction between the two layers. In order to investigate the mechanism of CIG-Se bi-layer crystallization, the thermal treatment temperature was varied. The properties of the prepared CIGSe2 thin films were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometry (EDS), and UV-visible spectrophotometry.
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Document Type: Research Article
Publication date: 2012-04-01
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