Authors: Kwon, Jinhyeong; Park, Shinyoung; Haque, Md. Mominul; Kim, Young-Seok; Lee, Caroline Sunyong

Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 4, April 2012 , pp. 3434-3437(4)

Publisher: American Scientific Publishers

Abstract:

Sub-50 nm copper nanoparticles coated with sub-5 nm 1-octanethiol layer for oxidation inhibition were examined to confirm the 1 -octanethiol removal temperature as the sub-50 nm copper nanoparticles are sintered. As a result, 1-octanethiol Self-Assembled Multi-layers (SAMs) on sub-50 nm copper nanoparticles were successfully removed before sintering of copper nanoparticles so that a high density of copper line could be obtained. Finally, the line resistivity was measured and compared to verify the effect of sintering in different atmospheres. As a result, electrical resistivity of the copper pattern sintered in hydrogen atmosphere was measured at 6.96 × 10⁻⁶ ohm-cm whereas that of the copper pattern sintered in mixed gas atmosphere was measured at 2.62 × 10⁻⁵ ohm-cm. Thus, sintering of copper patterns was successfully done to show low electrical resistivity values. Moreover, removal of 1-octanethiol coating after sintering process was confirmed using X-ray photoelectron spectroscopy (XPS) analysis. By showing no sulfur content, XPS results indicate that 1-octanethiol is completely removed. Therefore, the vapor form of 1-octanethiol coating layers can be safely used as an oxidation inhibition layer for low temperature sintering processes and ink-jet applications.

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2012.5638

Publication date: 2012-04-01

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