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Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors

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Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1∼2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn–Sn–oxide, causing a larger shift of the threshold voltage (ΔV th).

Document Type: Research Article


Publication date: April 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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