Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors
Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1∼2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn–Sn–oxide, causing a larger shift of the threshold voltage (ΔV th).
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Document Type: Research Article
Publication date: 2012-04-01
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