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Low-Voltage-Driven Pentacene Thin-Film Transistors with Cross-Linked Poly(4-vinylphenol)/High-k Bi5Nb3O15 Hybrid Dielectric for Phototransistor

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Abstract:

This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/ inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-/c) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi5Nb3O15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (∼ −5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm2/Vs, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias VG = 0 V under 100 mW/cm2 AM 1.5 illumination.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.5640

Publication date: April 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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