Low-Voltage-Driven Pentacene Thin-Film Transistors with Cross-Linked Poly(4-vinylphenol)/High-k Bi5Nb3O15 Hybrid Dielectric for Phototransistor
This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/ inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-/c) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi5Nb3O15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (∼ −5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm2/Vs, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias VG = 0 V under 100 mW/cm2 AM 1.5 illumination.
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Document Type: Research Article
Publication date: 2012-04-01
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