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Effect of Rapid Thermal Annealing on the Electrical, Optical and Structural Properties of ZnO-Doped In2O3 Films Grown by Linear Facing Target Sputtering

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We investigated the effect of rapid thermal annealing on the electrical, optical, and structural properties of ZnO-doped In2O3 (ZIO) films grown at different Ar/O2 flow ratios (15/0 and 15/1 sccm) by using linear facing target sputtering. It was found that the ZIO films grown at different Ar/O2 flow ratios showed different electrical and optical behavior with increasing rapid thermal annealing temperature. Synchrotron X-ray scattering examination showed that the different electrical and optical properties of the ZIO films could be attributed to the difference in preferred orientation with an increase in rapid thermal annealing temperature.
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Document Type: Research Article

Publication date: 01 April 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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