Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering
Here we demonstrate the fabrication of SnO X thin-film transistors (TFTs), where SnO X thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO X thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO X thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 2012-04-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites