Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering
Abstract:Here we demonstrate the fabrication of SnO X thin-film transistors (TFTs), where SnO X thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO X thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO X thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.
Document Type: Research Article
Publication date: April 1, 2012
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