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Highly Selective Etching of SnO2 Absorber in Binary Mask Structure for Extreme Ultra-Violet Lithography

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Among the core EUVL (extreme ultra-violet lithography) technologies for nanoscale patterning below the 30 nm node for Si chip manufacturing, new materials and fabrication processes for high-performance EUVL masks are of considerable importance due to the use of new reflective optics. In this work, the selective etching of SnO2 (tin oxide) as a new absorber material, with high EUV absorbance due to its large extinction coefficient, for the binary mask structure of SnO2 (absorber layer)/Ru (capping/etch stop layer)/Mo-Si multilayer (reflective layer)/Si (substrate), was investigated. Because infinitely high selectivity of the SnO2 layer to the Ru ESL is required due to the ultrathin nature of the Ru layer, various etch parameters were assessed in the inductively coupled Cl2/Ar plasmas in order to find the process window required for infinitely high etch selectivity of the SnO2 layer. The results showed that the gas flow ratio and V dc value play an important role in determining the process window for the infinitely high etch selectivity of SnO2 to Ru ESL. The high EUV-absorbance SnO2 layer, patternable by a dry process, allows a smaller absorber thickness, which can mitigate the geometric shadowing effects observed for high-performance binary EUVL masks.
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Document Type: Research Article

Publication date: 2012-04-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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