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Study on the Characteristics of Amorphous Low-k Thin Film for Solar Cells

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Abstract:

The most practical solar cells are silicon based crystal silicon solar cells. Phosphorus oxychloride for n + type doping was diffused on a p + Si, SiC and poly Si using N2 carrier gas by low pressure chemical vapor deposition. The series resistances on various p type silicon substrates were researched. An n +p + junction was fabricated by thermal diffusion of phosphorus oxychloride into a p + Si wafer. For the rear metallization, Al was deposited using screen printing and SiOC film was used instead of SiO2 film as a passivation material for the metal layer. SiOC film was made by the capacitive coupled plasma chemical vapor deposition. When the Fourier transform infrared spectra of SiOC film shows organic properties including a strong peak of the Si–CH3 bond, the efficiency was increased, because of the reduction of the recombination at the back surface.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.5603

Publication date: April 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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