Controlled Growth of ZnO Nanomaterials via Hydrothermal Method: Effect of Buffer Layer

$113.00 plus tax (Refund Policy)

Buy Article:


We report a facile solution-based method for the controlled growth of ZnO nanomaterials on an AIN/Si substrate. A ZnO buffer layer was coated on the substrate before growing the ZnO nanomaterials. The shape of the ZnO nanomaterials changed from nanosheet to nanorod as the thickness of the ZnO buffer layer increased. Doping of the buffer layer with Ga decreased the average grain size of the ZnO buffer layer, which resulted in the growth of longer and thinner ZnO nanorods on the buffer layer. The UV sensing results of the ZnO nanorod-based device revealed that the aspect ratio of the ZnO nanorods is crucial for enhancing the performance of the device.

Document Type: Research Article


Publication date: April 1, 2012

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • ingentaconnect is not responsible for the content or availability of external websites
Related content



Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more