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Recently published experimental results indicate that current extreme ultra-violet lithography (EUVL) patterning process seems to be very hard to meet the device manufacturing specification goals, such as resolution, line-width roughness, and sensitivity (RLS) simultaneously. To overcome
trade-off limitations between RLS performances of resist, we have approached the problem in several ways. Regarding materials, to make a uniform resist film we applied living radical polymerization and purification to obtain evenly interacting polymer chains. To obtain perfectly miscible resist
components, such as polymer, photo acid generator (PAG) and quencher, we have optimized their structures to have similar polarity range. Acid diffusivity factors are also controlled by the resist components properties, including polymer Tg and photo-acid polarity. In EUVL
process, we applied surfactant rinse process to reduce line-width roughness and pattern collapse. In this paper, we discuss the performance of our EUV according to our material development concepts, that is, resist film homogeneity and acid diffusion control in order to meet the device manufacturing
specification goals, such as resolution, line-width roughness (LWR), and sensitivity.
Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.