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Effect of Lightly Doped Drain Structure on P-Channel Metal Induced Lateral Crystallization Thin Film Transistors

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Abstract:

A Lightly Doped Drain (LDD) structure is known to be very effective in preventing hot electrons in modern NMOS transistors. In this work, the lightly doped region was formed in poly TFT by using a separate LDD mask aligned to a gate mask. The misalignment can be calculated to be about 1.5 μm, and depending on the location of the Vd application between the source and drain, an LDD or Lightly Doped Source (LDS) structure can be realized on the same TFT. In this way, we can make a perfect comparison between these two structures. It turned out that the LDD is mainly responsible for the low leakage current, and no more than 0.5 μm of the lightly doped region is necessary to lower the leakage current down to less than 5 × 10−11 amps at Vd = 10 volts. Typically, the on-current of MILC TFT is more than 10−4 amps, but 2.5 μm LDS decreases it to below 10−7 amps.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2012.5653

Publication date: April 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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