Growth Mechanism and Elemental Distribution of β-Ga2O3 Crystalline Nanowires Synthesized by Cobalt-Assisted Chemical Vapor Deposition
Abstract:Long β-Ga2O3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga2O3 nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga2O3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga2O3 nanowire stems several ten nanometers. A solid diffusion growth mechanism is proposed based on the spatial elemental distribution along the β-Ga2O3 nanowires at nanoscale.
Document Type: Research Article
Publication date: April 1, 2012
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