In-Situ Phosphrous Doping in ZnTe Nanowires with Enhanced p-type Conductivity
Authors: Cao, Y. L.; Liu, Z. T.; Chen, L. M.; Tang, Y. B.; Luo, L. B.; Lee, S. T.; Lee, C. S.
Source: Journal of Nanoscience and Nanotechnology, Volume 12, Number 3, March 2012 , pp. 2353-2359(7)
Publisher: American Scientific Publishers
Abstract:Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in p-type conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires.
Document Type: Research Article
Publication date: March 1, 2012
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